Part Number | IPB79CN10N G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 13A TO263-3 |
Series | OptiMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 12µA |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 716pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 31W (Tc) |
Rds On (Max) @ Id, Vgs | 79 mOhm @ 13A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-2 |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IPB79CN10N
INFIENON
7745
0.39
Dedicate Electronics (HK) Limited
IPB79CN10N G
Infinen
2719
1.5075
CIS Ltd (CHECK IC SOLUTION LIMITED)
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INFLNEON
9070
2.625
Finestock Electronics HK Limited
IPB79CN10N G
Infineon Technologies A...
8160
3.7425
MY Group (Asia) Limited
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INFINEON/IR
394
4.86
MASSTOCK ELECTRONICS LIMITED