Part Number | IPB80N06S209ATMA2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 55V 80A TO263-3 |
Series | OptiMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 125µA |
Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2360pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 190W (Tc) |
Rds On (Max) @ Id, Vgs | 8.8 mOhm @ 50A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-3-2 |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IPB80N06S209ATMA2
INFIENON
8635
1.26
Ysx Tech Co., Limited
IPB80N06S209ATMA2
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2.5875
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
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INFLNEON
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Viassion Technology Co., Limited
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Infineon Technologies A...
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STH Electronics Co.,Ltd
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UCAN TRADE (HK) LIMITED