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Part Number | IPB80N06S2L09ATMA2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 55V 80A TO263-3 |
Series | OptiMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 125µA |
Gate Charge (Qg) (Max) @ Vgs | 105nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2620pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 190W (Tc) |
Rds On (Max) @ Id, Vgs | 8.2 mOhm @ 52A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-3-2 |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image | ![]() |
IPB80N06S2L09ATMA2
INFIENON
1000
1.1
HK HEQING ELECTRONICS LIMITED
IPB80N06S2L09ATMA2
Infinen
4749
2.305
UCAN TRADE (HK) LIMITED
IPB80N06S2L09ATMA2
INFLNEON
16000
3.51
Finestock Electronics HK Limited
IPB80N06S2L09ATMA2
Infineon Technologies A...
46000
4.715
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IPB80N06S2L09ATMA2
INFINEON/IR
4000
5.92
CIS Ltd (CHECK IC SOLUTION LIMITED)