Part Number | IPB90N04S402ATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 40V 90A TO263-3-2 |
Series | OptiMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 95µA |
Gate Charge (Qg) (Max) @ Vgs | 118nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 9430pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 150W (Tc) |
Rds On (Max) @ Id, Vgs | 2.1 mOhm @ 90A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-3-2 |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
Hot Offer
IPB90N04S402ATMA1
INFINEON/IR
80000
4.42
Shenzhen Fuxinwei Semiconductor Co., Ltd
IPB90N04S402ATMA1
INFIENON
55300
0.93
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IPB90N04S402ATMA1
Infinen
1000
1.8025
MY Group (Asia) Limited
IPB90N04S402ATMA1
INFLNEON
30000
2.675
Shenzhen Tongxin Win-Win Technology Co., Ltd
IPB90N04S402ATMA1
Infineon Technologies A...
3505
3.5475
Honestwin Technology Co., Limited