Part Number | IPD048N06L3GBTMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 60V 90A TO252-3 |
Series | OptiMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 58µA |
Gate Charge (Qg) (Max) @ Vgs | 50nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 8400pF @ 30V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 115W (Tc) |
Rds On (Max) @ Id, Vgs | 4.8 mOhm @ 90A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IPD048N06L3GBTMA1
INFIENON
5000000
1.18
Hongkong Shengshi Electronics Limited
IPD048N06L3GBTMA1
Infinen
12000
2.3675
MeiChuangXinKe (SZ) Electronics Co., Ltd.
IPD048N06L3GBTMA1
INFLNEON
65500
3.555
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IPD048N06L3GBTMA1
Infineon Technologies A...
16000
4.7425
CIS Ltd (CHECK IC SOLUTION LIMITED)
IPD048N06L3GBTMA1
INFINEON/IR
17500
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HK KK Int'l Co.,Limited