Part Number | IPD053N08N3GATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 80V 90A TO252-3 |
Series | OptiMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 90µA |
Gate Charge (Qg) (Max) @ Vgs | 69nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4750pF @ 40V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 150W (Tc) |
Rds On (Max) @ Id, Vgs | 5.3 mOhm @ 90A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
Hot Offer
IPD053N08N3GATMA1
INFINEON/IR
3804
5.67
Shenzhen Fuxinwei Semiconductor Co., Ltd
IPD053N08N3GATMA1
INFIENON
6422
1.11
Yingxinyuan INT'L (Group) Limited
IPD053N08N3GATMA1
Infinen
4991
2.25
N&S Electronic Co., Limited
IPD053N08N3GATMA1
INFLNEON
1775
3.39
CIS Ltd (CHECK IC SOLUTION LIMITED)
IPD053N08N3GATMA1
Infineon Technologies A...
8577
4.53
N&S Electronic Co., Limited