Infineon Technologies AG

Description

May 19, 2014 IPD068N10N3 G. OptiMOS . 3 Power-Transistor. Features. N-channel, normal level. Excellent gate charge x R DS(on) product (FOM). Material Content Data Sheet. Sales Product Name. IPD068N10N3 G. Issued. 29. August 2013. MA#. MA000935662. Package. PG-TO252-3-11. Weight*. IPP045N10N3 IPD068N10N3 IPI072N10N3. * IPP072N10N3 BSC060N10NS3 IPA086N10N3. * IPB083N10N3 IPD082N10N3 IPI086N10N3. * IPP086N10N3 MH4, MH5. R30-1011602. 952-1492-ND. MH. Standoff HEX M3 THR Brass 16 mm. 8. QA, QB, QC, QD,. Q3, Q4, Q7, Q8. IPD068N10N3 G. IPD068N10N3 G-ND. Oct 30, 2009 IPD068N10N3 . Infineon. 1. 32. Q7. PNP -600mA -40V. MMBT4403. On Semi. 1. 33. Q9. PNP -800mA -40V. MMBT2907AWT1. On Semi. 1. 34.