Part Number | IPD068N10N3GATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 90A |
Series | OptiMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 90µA |
Gate Charge (Qg) (Max) @ Vgs | 68nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4910pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 150W (Tc) |
Rds On (Max) @ Id, Vgs | 6.8 mOhm @ 90A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
Hot Offer
IPD068N10N3GATMA1
Infineon Technologies A...
2000
4.4675
HONGKONG HUIZHONGDINGTAI ELECTRONIC TECHNOLOGY LIMITED
IPD068N10N3GATMA1
INFINEON/IR
5000
5.33
ECTRONICS TECHNOLOGY LIMITED
IPD068N10N3GATMA1
INFIENON
52500
1.88
HK KK Int'l Co.,Limited
IPD068N10N3GATMA1
Infinen
8000
2.7425
ACHIEVE ELECTRONICS CO., LIMITED
IPD068N10N3GATMA1
INFLNEON
3608
3.605
Hongkong Yunling Electronics Co.,Limited