Part Number | IPD082N10N3GATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 80A TO252-3 |
Series | OptiMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 75µA |
Gate Charge (Qg) (Max) @ Vgs | 55nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3980pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 125W (Tc) |
Rds On (Max) @ Id, Vgs | 8.2 mOhm @ 73A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IPD082N10N3GATMA1
INFIENON
18546
0.93
Useta Tech (HK) Limited
IPD082N10N3GATMA1
Infinen
1900
2.1375
HK HEQING ELECTRONICS LIMITED
IPD082N10N3GATMA1
INFLNEON
5000000
3.345
Hongkong Shengshi Electronics Limited
IPD082N10N3GATMA1
Infineon Technologies A...
55300
4.5525
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IPD082N10N3GATMA1
INFINEON/IR
1000
5.76
STH Electronics Co.,Ltd