Part Number | IPD096N08N3GBTMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 80V 73A TO252-3 |
Series | OptiMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 73A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.5V @ 46µA |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2410pF @ 40V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 100W (Tc) |
Rds On (Max) @ Id, Vgs | 9.6 mOhm @ 46A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IPD096N08N3GBTMA1
INFIENON
5000
0.14
Shenzhenshi Zhongyiyingtong Technology Co.,Ltd
IPD096N08N3GBTMA1
Infinen
16000
1.2075
Finestock Electronics HK Limited
IPD096N08N3GBTMA1
INFLNEON
18650
2.275
Fairstock HK Limited
IPD096N08N3GBTMA1
Infineon Technologies A...
5082
3.3425
Dedicate Electronics (HK) Limited
IPD096N08N3GBTMA1
INFINEON/IR
1000
4.41
MY Group (Asia) Limited