Part Number | IPD12CN10NGATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 67A TO252-3 |
Series | OptiMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 67A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 83µA |
Gate Charge (Qg) (Max) @ Vgs | 65nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4320pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 125W (Tc) |
Rds On (Max) @ Id, Vgs | 12.4 mOhm @ 67A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IPD12CN10NGATMA1
INFIENON
5000000
0.64
Hongkong Shengshi Electronics Limited
IPD12CN10NGATMA1
Infinen
360000
1.2925
GITSAMDAK ELECTRONICS (HK) CO., LIMITED
IPD12CN10NGATMA1
INFLNEON
55300
1.945
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IPD12CN10NGATMA1
Infineon Technologies A...
100000
2.5975
Yataitong Electronic Technology Co., Limited
IPD12CN10NGATMA1
INFINEON/IR
52500
3.25
CIS Ltd (CHECK IC SOLUTION LIMITED)