Part Number | IPD135N03LGXT |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 30V 30A TO252-3 |
Series | OptiMOS |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 31W (Tc) |
Rds On (Max) @ Id, Vgs | 13.5 mOhm @ 30A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IPD135N03LGXT
INFIENON
9535
0.31
MY Group (Asia) Limited
IPD135N03LGXT
Infinen
8487
1.3175
UCAN TRADE (HK) LIMITED
IPD135N03LGXT
INFLNEON
7852
2.325
Fairstock HK Limited
IPD135N03LGXT
Infineon Technologies A...
3148
3.3325
Dedicate Electronics (HK) Limited
IPD135N03LGXT
INFINEON/IR
1817
4.34
ONSTAR ELECTRONICS CO., LIMITED