Part Number | IPD14N06S280ATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 55V 17A TO252-3 |
Series | OptiMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 14µA |
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 293pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 47W (Tc) |
Rds On (Max) @ Id, Vgs | 80 mOhm @ 7A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IPD14N06S280ATMA1
INFIENON
3000
1.05
Shenzhen Yiyouda Technology Co., Ltd.
IPD14N06S280ATMA1
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1.8825
Finestock Electronics HK Limited
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INFLNEON
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Fairstock HK Limited
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Infineon Technologies A...
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MY Group (Asia) Limited
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5054
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