Part Number | IPD16CN10N G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 53A TO252-3 |
Series | OptiMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 53A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 61µA |
Gate Charge (Qg) (Max) @ Vgs | 48nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3220pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 100W (Tc) |
Rds On (Max) @ Id, Vgs | 16 mOhm @ 53A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IPD16CN10N
INFIENON
10149
1.71
HK HEQING ELECTRONICS LIMITED
IPD16CN10N G
Infinen
16000
2.9425
Finestock Electronics HK Limited
IPD16CN10N G
INFLNEON
18650
4.175
Fairstock HK Limited
IPD16CN10N G
Infineon Technologies A...
56513
5.4075
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
IPD16CN10N G
INFINEON/IR
44088
6.64
Yingxinyuan INT'L (Group) Limited