Rated 
(4/5) based on 4 customer reviews
(4/5) based on 4 customer reviews
| Part Number | IPD40N03S4L08ATMA1 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET N-CH TO252-3 |
| Series | Automotive, AEC-Q101, OptiMOS |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 2.2V @ 13µA |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1520pF @ 15V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Rds On (Max) @ Id, Vgs | 8.3 mOhm @ 40A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3-11 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Image |  |
Lowest Price: $0.25
Highest Price: $5.81
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Shenzhen Fuxinwei Semiconductor Co., Ltd
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Finestock Electronics HK Limited
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Shenzhen WTX Capacitor Co., Ltd.
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Infineon Technologies A...
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IPD40N03S4L08ATMA1 Ref.
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