Part Number | IPD50R800CE |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N CH 500V 5A TO252 |
Series | CoolMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.5V @ 130µA |
Gate Charge (Qg) (Max) @ Vgs | 12.4nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 280pF @ 100V |
Vgs (Max) | - |
FET Feature | Super Junction |
Power Dissipation (Max) | 40W (Tc) |
Rds On (Max) @ Id, Vgs | 800 mOhm @ 1.5A, 13V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IPD50R800CE
INFIENON
2765
0.99
Finestock Electronics HK Limited
IPD50R800CE
Infinen
9769
1.9325
Shenzhen guangyuan tengda technology co., LTD
IPD50R800CE
INFLNEON
1688
2.875
Shenzhen Qiangneng Electronics Co., Ltd.
IPD50R800CE
Infineon Technologies A...
8801
3.8175
STH Electronics Co.,Ltd
IPD50R800CE
INFINEON/IR
3578
4.76
CIS Ltd (CHECK IC SOLUTION LIMITED)