Part Number | IPD60N10S4L12ATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH TO252-3 |
Series | Automotive, AEC-Q101, HEXFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.1V @ 46µA |
Gate Charge (Qg) (Max) @ Vgs | 49nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3170pF @ 25V |
Vgs (Max) | ±16V |
FET Feature | - |
Power Dissipation (Max) | 94W (Tc) |
Rds On (Max) @ Id, Vgs | 12 mOhm @ 60A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3-313 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
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