Part Number | IPD60R180C7ATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH TO252-3 |
Series | CoolMOS,C7 |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 260µA |
Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1080pF @ 400V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 68W (Tc) |
Rds On (Max) @ Id, Vgs | 180 mOhm @ 5.3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
Hot Offer
IPD60R180C7ATMA1
INFINEON/IR
7288
4.38
HK FEILIDI ELECTRONIC CO., LIMITED
IPD60R180C7ATMA1
INFIENON
8349
0.8
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IPD60R180C7ATMA1
Infinen
1687
1.695
Finestock Electronics HK Limited
IPD60R180C7ATMA1
INFLNEON
4263
2.59
Hongkong Shengshi Electronics Limited
IPD60R180C7ATMA1
Infineon Technologies A...
3590
3.485
Redstar Electronic Limited