Part Number | IPD60R1K4C6ATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 600V 3.2A TO252-3 |
Series | CoolMOS,C6 |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 3.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 90µA |
Gate Charge (Qg) (Max) @ Vgs | 9.4nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 28.4W (Tc) |
Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 1.1A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IPD60R1K4C6ATMA1
INFIENON
5000000
0.93
Hongkong Shengshi Electronics Limited
IPD60R1K4C6ATMA1
Infinen
5242
1.805
Sun Kai Wah ( H.K. ) Electronics Co.
IPD60R1K4C6ATMA1
INFLNEON
55100
2.68
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IPD60R1K4C6ATMA1
Infineon Technologies A...
13479
3.555
CIS Ltd (CHECK IC SOLUTION LIMITED)
IPD60R1K4C6ATMA1
INFINEON/IR
1752
4.43
UCAN TRADE (HK) LIMITED