Part Number | IPD60R1K5CEAUMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 650V 5A TO252 |
Series | CoolMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 90µA |
Gate Charge (Qg) (Max) @ Vgs | 9.4nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 49W (Tc) |
Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 1.1A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO-252 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IPD60R1K5CEAUMA1
INFIENON
55100
1.19
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IPD60R1K5CEAUMA1
Infinen
5000000
1.93
Hongkong Shengshi Electronics Limited
IPD60R1K5CEAUMA1
INFLNEON
3000
2.67
HONGKONG SINIKO ELECTRONIC LIMITED
IPD60R1K5CEAUMA1
Infineon Technologies A...
3603
3.41
Hongkong Yunling Electronics Co.,Limited
IPD60R1K5CEAUMA1
INFINEON/IR
177779
4.15
Cicotex Electronics (HK) Limited