Part Number | IPD60R360P7ATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 650V 9A TO252-3 |
Series | CoolMOS,P7 |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 140µA |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 555pF @ 400V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 41W (Tc) |
Rds On (Max) @ Id, Vgs | 360 mOhm @ 2.7A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IPD60R360P7ATMA1
INFIENON
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WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
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