Part Number | IPD60R520C6 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 600V 8.1A TO252 |
Series | CoolMOS |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 8.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.5V @ 230µA |
Gate Charge (Qg) (Max) @ Vgs | 23.4nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 512pF @ 100V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 66W (Tc) |
Rds On (Max) @ Id, Vgs | 520 mOhm @ 2.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IPD60R520C6
INFIENON
4534
1.17
AIC Semiconductor Co., Limited
IPD60R520C6
Infinen
6473
1.9325
CIS Ltd (CHECK IC SOLUTION LIMITED)
IPD60R520C6
INFLNEON
5542
2.695
Yingxinyuan INT'L (Group) Limited
IPD60R520C6
Infineon Technologies A...
5439
3.4575
E-Core Electronics Co.
IPD60R520C6
INFINEON/IR
8868
4.22
Cicotex Electronics (HK) Limited