Part Number | IPD60R600C6ATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 600V 7.3A TO252 |
Series | CoolMOS,C6 |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs | 20.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 440pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 63W (Tc) |
Rds On (Max) @ Id, Vgs | 600 mOhm @ 2.4A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IPD60R600C6ATMA1
INFIENON
7500
1.55
Magic Intertrade Co., Limited
IPD60R600C6ATMA1
Infinen
4800
2.7075
E-Core Electronics Co.
IPD60R600C6ATMA1
INFLNEON
35800
3.865
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IPD60R600C6ATMA1
Infineon Technologies A...
2688
5.0225
Shenzhen Hongying Micro Technology Co., Ltd
IPD60R600C6ATMA1
INFINEON/IR
5000
6.18
Nosin (HK) Electronics Co.