Part Number | IPD60R600P6 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 600V 7.3A TO252 |
Series | CoolMOS,P6 |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 557pF @ 100V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 63W (Tc) |
Rds On (Max) @ Id, Vgs | 600 mOhm @ 2.4A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IPD60R600P6
INFIENON
7384
1.77
Shenzhen Qiangneng Electronics Co., Ltd.
IPD60R600P6
Infinen
2719
2.8275
IC Chip Co., Ltd.
IPD60R600P6
INFLNEON
2415
3.885
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IPD60R600P6
Infineon Technologies A...
8476
4.9425
WIDEY INTERNATIONAL LIMITED
IPD60R600P6
INFINEON/IR
8883
6
IC Direct Technology Limited