Part Number | IPD60R600P7ATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 650V 6A TO252-3 |
Series | CoolMOS,P7 |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 80µA |
Gate Charge (Qg) (Max) @ Vgs | 9nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 363pF @ 400V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 30W (Tc) |
Rds On (Max) @ Id, Vgs | 600 mOhm @ 1.7A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IPD60R600P7ATMA1
INFIENON
360000
1.9
GITSAMDAK ELECTRONICS (HK) CO., LIMITED
IPD60R600P7ATMA1
Infinen
5000
3.0575
Asia Pacific component (Hong Kong) Ltd.
IPD60R600P7ATMA1
INFLNEON
16000
4.215
Finestock Electronics HK Limited
IPD60R600P7ATMA1
Infineon Technologies A...
7358
5.3725
Shine Ever (Hong Kong) Co,.Ltd
IPD60R600P7ATMA1
INFINEON/IR
5000000
6.53
Hongkong Shengshi Electronics Limited