Part Number | IPD60R800CEATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 600V TO-252-3 |
Series | CoolMOS,CE |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 5.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 170µA |
Gate Charge (Qg) (Max) @ Vgs | 17.2nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 373pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 48W (Tc) |
Rds On (Max) @ Id, Vgs | 800 mOhm @ 2A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
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