Part Number | IPD65R1K0CEAUMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 650V TO-252 |
Series | CoolMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 7.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.5V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs | 15.3nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 328pF @ 100V |
Vgs (Max) | - |
FET Feature | Super Junction |
Power Dissipation (Max) | 68W (Tc) |
Rds On (Max) @ Id, Vgs | 1 Ohm @ 1.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IPD65R1K0CEAUMA1
INFIENON
1000
1.81
MY Group (Asia) Limited
IPD65R1K0CEAUMA1
Infinen
55
2.6225
FLOWER GROUP(HK)CO.,LTD
IPD65R1K0CEAUMA1
INFLNEON
16000
3.435
Finestock Electronics HK Limited
IPD65R1K0CEAUMA1
Infineon Technologies A...
18650
4.2475
Fairstock HK Limited
IPD65R1K0CEAUMA1
INFINEON/IR
5000000
5.06
Hongkong Shengshi Electronics Limited