Part Number | IPD65R600C6BTMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 650V 7.3A TO252 |
Series | CoolMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 210µA |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 440pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 63W (Tc) |
Rds On (Max) @ Id, Vgs | 600 mOhm @ 2.1A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
Hot Offer
IPD65R1K0CEAUMA
INFLNEON
500
2.025
Hong Kong Elsung Electronics Limited
IPD65R600C6BTMA1
INFIENON
6281
0.19
Dedicate Electronics (HK) Limited
IPD65R600C6BTMA1
Infinen
15000
1.1075
MY Group (Asia) Limited
IPD65R250E6
Infineon Technologies A...
35000
2.9425
C&G Electronics (HK) Co., Ltd
IPD65R250E6
INFINEON/IR
40
3.86
Wuhan P&S Information Technology Co., Ltd.