Part Number | IPD65R650CEATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 650V 10.1A TO252 |
Series | CoolMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 10.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.5V @ 0.21mA |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 440pF @ 100V |
Vgs (Max) | - |
FET Feature | Super Junction |
Power Dissipation (Max) | 86W (Tc) |
Rds On (Max) @ Id, Vgs | 650 mOhm @ 2.1A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IPD65R650CEATMA1
INFIENON
2905
0.71
MY Group (Asia) Limited
IPD65R650CEATMA1
Infinen
3781
1.7525
Shenzhenshi Zhongyiyingtong Technology Co.,Ltd
IPD65R650CEATMA1
INFLNEON
6657
2.795
Finestock Electronics HK Limited
IPD65R650CEATMA1
Infineon Technologies A...
3175
3.8375
Fairstock HK Limited
IPD65R650CE
INFINEON/IR
2508
4.88
Rolics Technology Limited