Part Number | IPD65R650CEAUMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 650V 7A TO-252 |
Series | CoolMOS,CE |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.5V @ 210µA |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 440pF @ 100V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 86W (Tc) |
Rds On (Max) @ Id, Vgs | 650 mOhm @ 2.1A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IPD65R650CEAUMA1
INFIENON
5000000
1.66
Hongkong Shengshi Electronics Limited
IPD65R650CEAUMA1
Infinen
50000
2.2375
Shenzhen Senli Technology Co., Ltd
IPD65R650CEAUMA1
INFLNEON
55200
2.815
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IPD65R650CEAUMA1
Infineon Technologies A...
2688
3.3925
Shenzhen Hongying Micro Technology Co., Ltd
IPD65R650CEAUMA1
INFINEON/IR
2197
3.97
UCAN TRADE (HK) LIMITED