Part Number | IPD65R660CFDATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 650V 6A TO252 |
Series | CoolMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4.5V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 615pF @ 100V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 62.5W (Tc) |
Rds On (Max) @ Id, Vgs | 660 mOhm @ 2.1A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IPD65R660CFDATMA1
INFIENON
1000000
1.88
ZHB Technology Co.,Ltd
IPD65R660CFDATMA1
Infinen
16000
3.4575
Finestock Electronics HK Limited
IPD65R660CFDATMA1
INFLNEON
5000
5.035
Xinnlinx Electronics Pte
IPD65R660CFDATMA1
Infineon Technologies A...
1000
6.6125
MY Group (Asia) Limited
IPD65R660CFDATMA1
INFINEON/IR
18
8.19
ASIAWAY (H.K.) LIMITED