Part Number | IPD80R1K0CEBTMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 800V 5.7A TO252-3 |
Series | CoolMOS |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 5.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.9V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 785pF @ 100V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 83W (Tc) |
Rds On (Max) @ Id, Vgs | 950 mOhm @ 3.6A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
Hot Offer
IPD80R1K4CE
INFINEON/IR
20000
6.11
JI Sheng (HK) Electronics Co., Limited
IPD80R1K0CEBTMA1
INFIENON
1000
0.72
MY Group (Asia) Limited
IPD80R1K0CEBTMA1
Infinen
5000
2.0675
Shenzhenshi Zhongyiyingtong Technology Co.,Ltd
IPD80R1K0CEBTMA1
INFLNEON
16000
3.415
Finestock Electronics HK Limited
IPD80R1K0CEBTMA1
Infineon Technologies A...
18650
4.7625
Fairstock HK Limited