Part Number | IPD80R2K8CEATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 800V 1.9A TO252-3 |
Series | CoolMOS,CE |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 1.9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.9V @ 120µA |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 100V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 42W (Tc) |
Rds On (Max) @ Id, Vgs | 2.8 Ohm @ 1.1A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IPD80R2K8CEATMA1
INFIENON
16000
0.65
Finestock Electronics HK Limited
IPD80R2K8CEATMA1
Infinen
57200
1.3025
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IPD80R2K8CEATMA1
INFLNEON
1110
1.955
HK KK Int'l Co.,Limited
IPD80R2K8CEATMA1
Infineon Technologies A...
69705
2.6075
CIS Ltd (CHECK IC SOLUTION LIMITED)
IPD80R2K8CEATMA1
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2167
3.26
Nosin (HK) Electronics Co.