Part Number | IPD80R4K5P7ATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 800V 1.5A DPAK |
Series | CoolMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 1.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs | 4nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 80pF @ 500V |
Vgs (Max) | ±20V |
FET Feature | Super Junction |
Power Dissipation (Max) | 13W (Tc) |
Rds On (Max) @ Id, Vgs | 4.5 Ohm @ 400mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IPD80R4K5P7ATMA1
INFIENON
6256
1.43
Dedicate Electronics (HK) Limited
IPD80R4K5P7ATMA1
Infinen
18650
2.1475
Fairstock HK Limited
IPD80R4K5P7ATMA1
INFLNEON
16000
2.865
Finestock Electronics HK Limited
IPD80R4K5P7ATMA1
Infineon Technologies A...
5000000
3.5825
Hongkong Shengshi Electronics Limited
IPD80R4K5P7ATMA1
INFINEON/IR
12000
4.3
Genuine Mall (HK)Electronics Limited