Part Number | IPD90N08S405ATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH TO252-3 |
Series | Automotive, AEC-Q101, OptiMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 90µA |
Gate Charge (Qg) (Max) @ Vgs | 68nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4800pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 144W (Tc) |
Rds On (Max) @ Id, Vgs | 5.3 mOhm @ 90A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3-313 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IPD90N08S405ATMA1
INFIENON
5000000
0.52
Hongkong Shengshi Electronics Limited
IPD90N08S405ATMA1
Infinen
57200
1.7825
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IPD90N08S405ATMA1
INFLNEON
5000
3.045
HITO TECHNOLOGY LIMITED
IPD90N08S405ATMA1
Infineon Technologies A...
2500
4.3075
YTSX (INT'L) GROUP CO., LIMITED
IPD90N08S405ATMA1
INFINEON/IR
400025
5.57
Shenzhen WTX Capacitor Co., Ltd.