Description
MOSFET 2N-CH 8TDSON Series: Automotive, AEC-Q101, OptiMOS? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25~C: 20A Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 22米A Gate Charge (Qg) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) @ Vds: 3050pF @ 25V Power - Max: 54W Operating Temperature: -55~C ~ 175~C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10
Part Number | IPG20N04S4L08AATMA1 |
Brand | Infineon Technologies AG |
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