Description
MOSFET 2N-CH 8TDSON Series: Automotive, AEC-Q101, OptiMOS? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25~C: 20A Rds On (Max) @ Id, Vgs: 11.6 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 15米A Gate Charge (Qg) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) @ Vds: 1990pF @ 25V Power - Max: 41W Operating Temperature: -55~C ~ 175~C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4 (5.15x6.15)
Part Number | IPG20N04S4L11ATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Infineon Technologies AG |
Description | MOSFET 2N-CH 8TDSON |
Series | Automotive, AEC-Q101, OptiMOS |
Packaging | 2 N-Channel (Dual) |
FET Type | Cut Tape (CT) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 20A |
Rds On (Max) @ Id, Vgs | 11.6 mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 15µA |
Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1990pF @ 25V |
Power - Max | 41W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerVDFN |
Supplier Device Package | PG-TDSON-8-4 |
Image |
IPG20N04S4L11ATMA1
INFIENON
5000000
1.51
Hongkong Shengshi Electronics Limited
IPG20N04S4L11ATMA1
Infinen
35800
2.565
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IPG20N04S4L-11ATMA1
INFLNEON
29500
3.62
N&S Electronic Co., Limited
IPG20N04S4L11ATMA1
Infineon Technologies A...
30990
4.675
N&S Electronic Co., Limited
IPG20N04S4L11ATMA1
INFINEON/IR
11400
5.73
CIS Ltd (CHECK IC SOLUTION LIMITED)