Part Number | IPG20N06S2L35AATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Infineon Technologies AG |
Description | MOSFET 2N-CH 8TDSON |
Series | Automotive, AEC-Q101, OptiMOS |
Packaging | 2 N-Channel (Dual) |
FET Type | Cut Tape (CT) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
Rds On (Max) @ Id, Vgs | 35 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id | 2V @ 27µA |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 790pF @ 25V |
Power - Max | 65W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerVDFN |
Supplier Device Package | PG-TDSON-8-10 |
Image |
IPG20N06S2L35AATMA1
INFIENON
8761
0.11
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IPG20N06S2L35AATMA1
Infinen
4932
0.68
Hongkong Shengshi Electronics Limited
IPG20N06S2L35AATMA1
INFLNEON
6452
1.25
HITO TECHNOLOGY LIMITED
IPG20N06S2L35AATMA1
Infineon Technologies A...
3946
1.82
Hongkong Yunling Electronics Co.,Limited
IPG20N06S2L35AATMA1
INFINEON/IR
9633
2.39
CIS Ltd (CHECK IC SOLUTION LIMITED)