(5/5) based on 10 customer reviews
Description
MOSFET 2N-CH 55V 20A TDSON-8-4 Series: OptiMOS? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25～C: 20A Rds On (Max) @ Id, Vgs: 35 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2V @ 27米A Gate Charge (Qg) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) @ Vds: 790pF @ 25V Power - Max: 65W Operating Temperature: -55～C ~ 175～C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4 (5.15x6.15)
| Part Number | IPG20N06S2L35ATMA1 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Infineon Technologies AG |
| Description | MOSFET 2N-CH 55V 20A TDSON-8-4 |
| Series | Automotive, AEC-Q101, OptiMOS |
| Packaging | 2 N-Channel (Dual) |
| FET Type | Cut Tape (CT) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Rds On (Max) @ Id, Vgs | 35 mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 27µA |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 790pF @ 25V |
| Power - Max | 65W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PG-TDSON-8-4 |
| Image |  |
IPG20N06S2L35ATMA1
INFIENON
5000000
1.64
Hongkong Shengshi Electronics Limited
IPG20N06S2L35ATMA1
Infinen
2688
2.7325
Shenzhen Hongying Micro Technology Co., Ltd
IPG20N06S2L35ATMA1
INFLNEON
10000
3.825
ANCHIP TECHNOLOGY CO., LIMITED
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Infineon Technologies A...
20148
4.9175
ODK(HK) ELECTRONICS TECHNOLOGY CO.LIMITED
IPG20N06S2L35ATMA1
INFINEON/IR
8000
6.01
YK TECH ELECTRONIC CO., LIMITED
