Part Number | IPG20N06S2L65AATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Infineon Technologies AG |
Description | MOSFET 2N-CH 8TDSON |
Series | Automotive, AEC-Q101, OptiMOS |
Packaging | 2 N-Channel (Dual) |
FET Type | Cut Tape (CT) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 20A |
Rds On (Max) @ Id, Vgs | 65 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id | 2V @ 14µA |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 410pF @ 25V |
Power - Max | 43W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerVDFN |
Supplier Device Package | PG-TDSON-8-10 |
Image |
IPG20N06S2L65AATMA1
INFIENON
8202
0.53
Haixunda Electronic Co., Limited
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WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
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INFLNEON
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HITO TECHNOLOGY LIMITED
IPG20N06S2L65AATMA1
Infineon Technologies A...
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Hongkong Shengshi Electronics Limited
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