Description
MOSFET 2N-CH 55V 20A TDSON-8 Series: OptiMOS? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25~C: 20A Rds On (Max) @ Id, Vgs: 35 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 2.2V @ 15米A Gate Charge (Qg) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) @ Vds: 1730pF @ 25V Power - Max: 30W Operating Temperature: -55~C ~ 175~C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4 (5.15x6.15)
Part Number | IPG20N06S3L-35 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Infineon Technologies AG |
Description | MOSFET 2N-CH 55V 20A TDSON-8 |
Series | OptiMOS |
Packaging | 2 N-Channel (Dual) |
FET Type | Tape & Reel (TR) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 20A |
Rds On (Max) @ Id, Vgs | 35 mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 15µA |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1730pF @ 25V |
Power - Max | 30W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerVDFN |
Supplier Device Package | PG-TDSON-8-4 |
Image |
IPG20N06S3L-35
INFIENON
88413
1.05
AIC Semiconductor Co., Limited
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CIS Ltd (CHECK IC SOLUTION LIMITED)
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INFLNEON
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MY Group (Asia) Limited
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HITO TECHNOLOGY LIMITED
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OCEANIA INTERNATIONAL INDUSTRIAL LIMITED