Description
MOSFET 2N-CH 8TDSON Series: Automotive, AEC-Q101, OptiMOS? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25~C: 20A Rds On (Max) @ Id, Vgs: 13.7 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 20米A Gate Charge (Qg) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) @ Vds: 2890pF @ 25V Power - Max: 50W Operating Temperature: -55~C ~ 175~C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10
Part Number | IPG20N06S4L14AATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Infineon Technologies AG |
Description | MOSFET 2N-CH 8TDSON |
Series | Automotive, AEC-Q101, OptiMOS |
Packaging | 2 N-Channel (Dual) |
FET Type | Tape & Reel (TR) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 20A |
Rds On (Max) @ Id, Vgs | 13.7 mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 20µA |
Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2890pF @ 25V |
Power - Max | 50W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerVDFN |
Supplier Device Package | PG-TDSON-8-10 |
Image |
Hot Offer
IPG20N06S4L14AATMA1
Infineon Technologies A...
5000
3.8625
Hongxin Technology Limited
IPG20N06S4L14AATMA1
INFINEON/IR
24853
4.81
WALTON ELECTRONICS CO., LIMITED
IPG20N06S4L14AATMA1
INFIENON
22570
1.02
Useta Tech (HK) Limited
IPG20N06S4L14AATMA1
Infinen
10000
1.9675
HK HEQING ELECTRONICS LIMITED
IPG20N06S4L14AATMA1
INFLNEON
2960
2.915
ANCHIP TECHNOLOGY CO., LIMITED