Part Number | IPI032N06N3 G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 60V 120A TO262-3 |
Series | OptiMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 118µA |
Gate Charge (Qg) (Max) @ Vgs | 165nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 13000pF @ 30V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 188W (Tc) |
Rds On (Max) @ Id, Vgs | 3.2 mOhm @ 100A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO262-3 |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
IPI032N06N3 G
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