Part Number | IPI04CN10N |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 100A TO262-3 |
Series | OptiMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 210nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 13800pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Rds On (Max) @ Id, Vgs | 4.2 mOhm @ 100A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO262-3 |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
IPI04CN10N G
INFIENON
1000
1.88
MY Group (Asia) Limited
IPI04CN10N
Infinen
5000
2.82666666666667
Inchange Semiconductor Company Limited
IPI04CN10NG
INFLNEON
6000
3.77333333333333
Bonase Electronics (HK) Co., Limited
IPI04CN10NG
Infineon Technologies A...
1818
4.72
HK Jiaweiyi Technology Limited