Part Number | IPI070N08N3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 80V 80A TO262-3 |
Series | OptiMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.5V @ 73µA |
Gate Charge (Qg) (Max) @ Vgs | 56nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3840pF @ 40V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 136W (Tc) |
Rds On (Max) @ Id, Vgs | 7 mOhm @ 73A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO262-3 |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
IPI070N08N3 G
INFIENON
1000
0.95
MY Group (Asia) Limited
IPI070N08N3
Infinen
5000
2.57
Inchange Semiconductor Company Limited
IPI070N06N G
INFLNEON
1000
4.19
MY Group (Asia) Limited