Part Number | IPI08CN10N |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 95A TO262-3 |
Series | OptiMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 95A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 130µA |
Gate Charge (Qg) (Max) @ Vgs | 100nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 6660pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 167W (Tc) |
Rds On (Max) @ Id, Vgs | 8.5 mOhm @ 95A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO262-3 |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
IPI08CN10N G
INFIENON
1000
1.73
MY Group (Asia) Limited
IPI08CN10N G
Infinen
5000
2.84
G Trader Limited
IPI08CN10N
INFLNEON
100
3.95
ShenZhen HengBin Technology Co.,Limited
IPI08CN10N
Infineon Technologies A...
1100
5.06
CIS Ltd (CHECK IC SOLUTION LIMITED)
IPI08CN10N
INFINEON/IR
122
6.17
HK TWO L ELECTRONIC LIMITED