Part Number | IPI100P03P3L-04 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET P-CH 30V 100A TO262-3 |
Series | OptiMOS |
Packaging | Tube |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.1V @ 475µA |
Gate Charge (Qg) (Max) @ Vgs | 200nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 9300pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 200W (Tc) |
Rds On (Max) @ Id, Vgs | 4.3 mOhm @ 80A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO262-3 |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
IPI100P03P3L-04
INFIENON
8855
0.83
Dedicate Electronics (HK) Limited
IPI100P03P3L-04
Infinen
1557
1.9375
MY Group (Asia) Limited
IPI100N08S207AKSA1
INFLNEON
6057
3.045
E-Power Market Co.,Ltd
IPI100N04S3-03
Infineon Technologies A...
6986
4.1525
Dedicate Electronics (HK) Limited
IPI100N04S303AKSA1
INFINEON/IR
4844
5.26
MY Group (Asia) Limited