Part Number | IPI110N20N3GAKSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 200V 88A TO262-3 |
Series | OptiMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 88A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 270µA |
Gate Charge (Qg) (Max) @ Vgs | 87nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 7100pF @ 100V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Rds On (Max) @ Id, Vgs | 11 mOhm @ 88A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO262-3 |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
IPI110N20N3GAKSA1
INFIENON
1000
0.9
MY Group (Asia) Limited
IPI110N20N3GAKSA1
Infinen
6166
1.9275
Dedicate Electronics (HK) Limited
IPI110N20N3 G
INFLNEON
100
2.955
Redstar Electronic Limited
IPI110N20N3G
Infineon Technologies A...
20000
3.9825
Ande Electronics Co., Limited
IPI110N20N3G
INFINEON/IR
35789
5.01
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED