Part Number | IPI120N10S405AKSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH TO262-3 |
Series | Automotive, AEC-Q101, OptiMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.5V @ 120µA |
Gate Charge (Qg) (Max) @ Vgs | 91nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 6540pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 190W (Tc) |
Rds On (Max) @ Id, Vgs | 5.3 mOhm @ 100A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO262-3-1 |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
IPI120N10S405AKSA1
INFIENON
8414
0.39
YK TECH ELECTRONIC CO., LIMITED
IPI120N10S405AKSA1
Infinen
9840
1.7575
MY Group (Asia) Limited
IPI120N10S405AKSA1
INFLNEON
9829
3.125
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IPI120N10S405AKSA1
Infineon Technologies A...
8821
4.4925
Hlinsemi Electronics (HongKong) Co., Limited
IPI120N10S405AKSA1
INFINEON/IR
9395
5.86
Viassion Technology Co., Limited