Part Number | IPI126N10N3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 58A TO262-3 |
Series | OptiMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.5V @ 46µA |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2500pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 94W (Tc) |
Rds On (Max) @ Id, Vgs | 12.6 mOhm @ 46A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO262-3 |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
IPI126N10N3 G
INFIENON
2523
1.79
MY Group (Asia) Limited
IPI126N10N3G
Infinen
625
2.34333333333333
Hong Kong In Fortune Electronics Co., Limited
IPI126N10N3G
INFLNEON
9848
2.89666666666667
Lungke Electronics Technology Co., Limited
IPI12610N3
Infineon Technologies A...
677
3.45
Inchange Semiconductor Company Limited